A2C50S65M2
Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Ražotājs: STMicroelectronics
Oriģināls simbols:
A2C50S65M2
TME Simbols:
A2C50S65M2
Specifikācija
Manufacturer | STMicroelectronics | |
Type of semiconductor module | IGBT | |
Semiconductor structure | diode/transistor | |
Topology | boost chopper, IGBT half-bridge x3, NTC thermistor, three-phase diode bridge | |
Max. off-state voltage | 650V | |
Collector current | 50A | |
Case | ACEPACK™2 | |
Application | Inverter, motors | |
Electrical mounting | Press-in PCB | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 100A | |
Power dissipation | 208W | |
Mechanical mounting | screw |
Masa bruto50 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Moduļi IGBT STMicroelectronics,
* A2C50S65M2Gabalu skaits (Daudzkārtīgums: 1)
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Neto cena par daudzumiem no 1 gab - 66.72 EURBruto cena par daudzumiem no 1 gab - 80.74 EUR