A2C50S65M2
Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Ražotājs: STMicroelectronics
Oriģināls simbols:
A2C50S65M2
TME Simbols:
A2C50S65M2
Specifikācija
Manufacturer | STMicroelectronics | ||
Type of semiconductor module | IGBT | ||
Semiconductor structure | diode/transistor | ||
Topology | boost chopper, IGBT half-bridge x3, NTC thermistor, three-phase diode bridge | ||
Max. off-state voltage | 650V | ||
Collector current | 50A | ||
Case | ACEPACK™2 | ||
Application | Inverter, motors | ||
Electrical mounting | Press-in PCB | ||
Gate-emitter voltage | ±20V | ||
Pulsed collector current | 100A | ||
Power dissipation | 208W | ||
Mechanical mounting | screw |
Masa bruto50 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Moduļi IGBT STMicroelectronics,
* A2C50S65M2Gabalu skaits (Daudzkārtīgums: 1)
0 TME noliktavā
Neto cena par daudzumiem no 1 gab - 66.72 EURBruto cena par daudzumiem no 1 gab - 80.74 EUR