IXFN210N30P3
Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Proizvajalec: IXYS
Proizvajalčeva oznaka:
IXFN210N30P3
Simbol TME:
IXFN210N30P3
Specifikacija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 300V | |
Drain current | 192A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 14,5mΩ | |
Pulsed drain current | 550A | |
Power dissipation | 1,5kW | |
Technology | HiPerFET™, Polar3™ | |
Kind of channel | enhancement | |
Gate charge | 268nC | |
Reverse recovery time | 250ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Bruto teža37.05 g
Certifikati
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