APT25GP120BDQ1G
Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
APT25GP120BDQ1G
TME Sümbol:
APT25GP120BDQ1G
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | IGBT | |
Technology | POWER MOS 7®, PT | |
Collector-emitter voltage | 1,2kV | |
Collector current | 33A | |
Power dissipation | 417W | |
Case | TO247-3 | |
Gate-emitter voltage | ±30V | |
Pulsed collector current | 90A | |
Mounting | THT | |
Gate charge | 110nC | |
Kind of package | tube | |
Turn-on time | 26ns | |
Turn-off time | 200ns | |
Features of semiconductor devices | integrated anti-parallel diode |
Brutomass6.097 g
Sertifikaadid
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Vaata selle kategooria ülejäänud tooteid: Transistorid IGBT THT MICROCHIP TECHNOLOGY,
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Netohind koguste puhul alates 1 tk - 14.54 USDKoguste brutohind alates 1 tk - 18.02 USD
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Netohind koguste puhul alates 10 tk - 12.93 USDKoguste brutohind alates 10 tk - 16.03 USD
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