APT33GF120B2RDQ2G
Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
APT33GF120B2RDQ2G
TME Sümbol:
APT33GF120B2RDQ2G
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | IGBT | |
Technology | NPT | |
Collector-emitter voltage | 1,2kV | |
Collector current | 30A | |
Power dissipation | 357W | |
Case | T-Max | |
Gate-emitter voltage | ±30V | |
Pulsed collector current | 75A | |
Mounting | THT | |
Gate charge | 170nC | |
Kind of package | tube | |
Turn-on time | 31ns | |
Turn-off time | 355ns | |
Features of semiconductor devices | integrated anti-parallel diode |
Brutomass6 g
Sertifikaadid
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Vaata selle kategooria ülejäänud tooteid: Transistorid IGBT THT MICROCHIP TECHNOLOGY,
* APT33GF120B2RDQ2GTükkide arv (Mitmekordsus: 1)
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Netohind koguste puhul alates 1 tk - 26.35 USDKoguste brutohind alates 1 tk - 32.67 USD
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