APT33GF120LRDQ2G
Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
APT33GF120LRDQ2G
TME Sümbol:
APT33GF120LRDQ2G
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | IGBT | |
Technology | NPT | |
Collector-emitter voltage | 1,2kV | |
Collector current | 30A | |
Power dissipation | 357W | |
Case | TO264 | |
Gate-emitter voltage | ±30V | |
Pulsed collector current | 75A | |
Mounting | THT | |
Gate charge | 170nC | |
Kind of package | tube | |
Turn-on time | 31ns | |
Turn-off time | 355ns | |
Features of semiconductor devices | integrated anti-parallel diode |
Brutomass6 g
Sertifikaadid
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Vaata selle kategooria ülejäänud tooteid: Transistorid IGBT THT MICROCHIP TECHNOLOGY,
* APT33GF120LRDQ2GTükkide arv (Mitmekordsus: 1)
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Netohind koguste puhul alates 1 tk - 15.79 EURKoguste brutohind alates 1 tk - 19.58 EUR
Netohind koguste puhul alates 3 tk - 14.28 EURKoguste brutohind alates 3 tk - 17.71 EUR
Netohind koguste puhul alates 10 tk - 12.62 EURKoguste brutohind alates 10 tk - 15.64 EUR
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