APT35GP120B2D2G
Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
APT35GP120B2D2G
TME Sümbol:
APT35GP120B2D2G
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of transistor | IGBT | ||
Technology | POWER MOS 7®, PT | ||
Collector-emitter voltage | 1,2kV | ||
Collector current | 46A | ||
Power dissipation | 543W | ||
Case | T-Max | ||
Gate-emitter voltage | ±30V | ||
Pulsed collector current | 140A | ||
Mounting | THT | ||
Gate charge | 150nC | ||
Kind of package | tube | ||
Turn-on time | 36ns | ||
Turn-off time | 0,22µs | ||
Features of semiconductor devices | integrated anti-parallel diode |
Brutomass6 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: Transistorid IGBT THT MICROCHIP TECHNOLOGY,
* APT35GP120B2D2GTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 24.45 EURKoguste brutohind alates 1 tk - 30.31 EUR
Netohind koguste puhul alates 3 tk - 22.00 EURKoguste brutohind alates 3 tk - 27.29 EUR
Netohind koguste puhul alates 10 tk - 19.45 EURKoguste brutohind alates 10 tk - 24.12 EUR
Pakkumine on saadaval sisselogitud klientidele