APT35GP120B2DQ2G
Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
APT35GP120B2DQ2G
TME Sümbol:
APT35GP120B2DQ2G
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | IGBT | |
Technology | POWER MOS 7®, PT | |
Collector-emitter voltage | 1,2kV | |
Collector current | 46A | |
Power dissipation | 543W | |
Case | T-Max | |
Gate-emitter voltage | ±30V | |
Pulsed collector current | 140A | |
Mounting | THT | |
Gate charge | 150nC | |
Kind of package | tube | |
Turn-on time | 36ns | |
Turn-off time | 0,22µs | |
Features of semiconductor devices | integrated anti-parallel diode |
Brutomass6.835 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: Transistorid IGBT THT MICROCHIP TECHNOLOGY,
* APT35GP120B2DQ2GTükkide arv (Mitmekordsus: 1)
26 TME laos
Netohind koguste puhul alates 1 tk - 58.81 USDKoguste brutohind alates 1 tk - 72.92 USD
Netohind koguste puhul alates 3 tk - 57.40 USDKoguste brutohind alates 3 tk - 71.18 USD
Netohind koguste puhul alates 10 tk - 56.40 USDKoguste brutohind alates 10 tk - 69.94 USD
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