APT40GP90B2DQ2G
Transistor: IGBT; PT; 900V; 50A; 543W; T-Max
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
APT40GP90B2DQ2G
TME Sümbol:
APT40GP90B2DQ2G
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | IGBT | |
Technology | POWER MOS 7®, PT | |
Collector-emitter voltage | 900V | |
Collector current | 50A | |
Power dissipation | 543W | |
Case | T-Max | |
Gate-emitter voltage | ±30V | |
Pulsed collector current | 160A | |
Mounting | THT | |
Gate charge | 145nC | |
Kind of package | tube | |
Turn-on time | 37ns | |
Turn-off time | 0,22µs | |
Features of semiconductor devices | integrated anti-parallel diode |
Brutomass6.84 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: Transistorid IGBT THT MICROCHIP TECHNOLOGY,
* APT40GP90B2DQ2GTükkide arv (Mitmekordsus: 1)
29 TME laos
Netohind koguste puhul alates 1 tk - 23.63 EURKoguste brutohind alates 1 tk - 29.30 EUR
Netohind koguste puhul alates 3 tk - 21.27 EURKoguste brutohind alates 3 tk - 26.37 EUR
Netohind koguste puhul alates 10 tk - 18.79 EURKoguste brutohind alates 10 tk - 23.30 EUR
Pakkumine on saadaval sisselogitud klientidele
Tootja pakendamismeetodTuub = 30 tk