APT40GR120B2D30
Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
APT40GR120B2D30
TME Sümbol:
APT40GR120B2D30
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | IGBT | |
Technology | NPT, POWER MOS 8® | |
Collector-emitter voltage | 1,2kV | |
Collector current | 40A | |
Power dissipation | 500W | |
Case | T-Max | |
Gate-emitter voltage | ±30V | |
Pulsed collector current | 160A | |
Mounting | THT | |
Gate charge | 0,21µC | |
Kind of package | tube | |
Turn-on time | 47ns | |
Turn-off time | 232ns | |
Features of semiconductor devices | integrated anti-parallel diode | |
Part status | Not recommended for new designs |
Brutomass6.76 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: Transistorid IGBT THT MICROCHIP TECHNOLOGY,
* APT40GR120B2D30Tükkide arv (Mitmekordsus: 1)
60 TME laos
Netohind koguste puhul alates 1 tk - 27.40 USDKoguste brutohind alates 1 tk - 33.98 USD
Netohind koguste puhul alates 3 tk - 24.51 USDKoguste brutohind alates 3 tk - 30.39 USD
Netohind koguste puhul alates 10 tk - 21.61 USDKoguste brutohind alates 10 tk - 26.79 USD
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