APT80GA90LD40
Transistor: IGBT; PT; 900V; 80A; 625W; TO264
Tootja: MICROCHIP TECHNOLOGY
Tootja tähistus:
APT80GA90LD40
TME Sümbol:
APT80GA90LD40
Spetsifikatsioon
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | IGBT | |
Technology | POWER MOS 8®, PT | |
Collector-emitter voltage | 900V | |
Collector current | 80A | |
Power dissipation | 625W | |
Case | TO264 | |
Gate-emitter voltage | ±30V | |
Pulsed collector current | 239A | |
Mounting | THT | |
Gate charge | 200nC | |
Kind of package | tube | |
Turn-on time | 49ns | |
Turn-off time | 320ns | |
Features of semiconductor devices | integrated anti-parallel diode |
Brutomass6 g
Sertifikaadid
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Vaata selle kategooria ülejäänud tooteid: Transistorid IGBT THT MICROCHIP TECHNOLOGY,
* APT80GA90LD40
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