IXFN170N30P
Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Tootja: IXYS
Tootja tähistus:
IXFN170N30P
TME Sümbol:
IXFN170N30P
Spetsifikatsioon
Manufacturer | IXYS | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | single transistor | ||
Drain-source voltage | 300V | ||
Drain current | 138A | ||
Case | SOT227B | ||
Electrical mounting | screw | ||
Polarisation | unipolar | ||
On-state resistance | 18mΩ | ||
Pulsed drain current | 500A | ||
Power dissipation | 890W | ||
Technology | HiPerFET™, Polar™ | ||
Kind of channel | enhancement | ||
Gate charge | 258nC | ||
Reverse recovery time | 200ns | ||
Gate-source voltage | ±30V | ||
Mechanical mounting | screw |
Brutomass29.8 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN170N30PTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 38.45 EURKoguste brutohind alates 1 tk - 47.68 EUR
Netohind koguste puhul alates 3 tk - 37.26 EURKoguste brutohind alates 3 tk - 46.20 EUR
Netohind koguste puhul alates 10 tk - 34.78 EURKoguste brutohind alates 10 tk - 43.13 EUR
Tootja pakendamismeetodTuub = 10 tk