IXFN32N120P
Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Tootja: IXYS
Tootja tähistus:
IXFN32N120P
TME Sümbol:
IXFN32N120P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1,2kV | |
Drain current | 32A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0,31Ω | |
Pulsed drain current | 100A | |
Power dissipation | 1kW | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 360nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Brutomass37.27 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN32N120PTükkide arv (Mitmekordsus: 1)
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Netohind koguste puhul alates 1 tk - 81.21 EURKoguste brutohind alates 1 tk - 100.70 EUR
Netohind koguste puhul alates 3 tk - 71.73 EURKoguste brutohind alates 3 tk - 88.94 EUR
Netohind koguste puhul alates 10 tk - 64.45 EURKoguste brutohind alates 10 tk - 79.91 EUR
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