IXFN360N10T
Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Tootja: IXYS
Tootja tähistus:
IXFN360N10T
TME Sümbol:
IXFN360N10T
Spetsifikatsioon
Manufacturer | IXYS | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | single transistor | ||
Drain-source voltage | 100V | ||
Drain current | 360A | ||
Case | SOT227B | ||
Electrical mounting | screw | ||
Polarisation | unipolar | ||
On-state resistance | 2,6mΩ | ||
Pulsed drain current | 900A | ||
Power dissipation | 830W | ||
Technology | GigaMOS™, HiPerFET™ | ||
Kind of channel | enhancement | ||
Gate charge | 525nC | ||
Reverse recovery time | 130ns | ||
Gate-source voltage | ±30V | ||
Mechanical mounting | screw |
Brutomass36.9 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN360N10TTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 26.87 EURKoguste brutohind alates 1 tk - 33.32 EUR
Netohind koguste puhul alates 5 tk - 22.77 EURKoguste brutohind alates 5 tk - 28.23 EUR
Netohind koguste puhul alates 10 tk - 20.90 EURKoguste brutohind alates 10 tk - 25.92 EUR
Netohind koguste puhul alates 20 tk - 19.87 EURKoguste brutohind alates 20 tk - 24.64 EUR
Netohind koguste puhul alates 50 tk - 19.04 EURKoguste brutohind alates 50 tk - 23.61 EUR
Tootja pakendamismeetodTuub = 10 tkKast = 60 tk