IXFN360N10T
Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Tootja: IXYS
Tootja tähistus:
IXFN360N10T
TME Sümbol:
IXFN360N10T
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 100V | |
Drain current | 360A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 2,6mΩ | |
Pulsed drain current | 900A | |
Power dissipation | 830W | |
Technology | GigaMOS™, HiPerFET™ | |
Kind of channel | enhancement | |
Gate charge | 525nC | |
Reverse recovery time | 130ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Brutomass36.9 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN360N10T
231 TME laos
Tükkide arv (Mitmekordsus: 1)
Netohind koguste puhul alates 1 tk - 28.82 USDKoguste brutohind alates 1 tk - 35.74 USD
Netohind koguste puhul alates 5 tk - 27.04 USDKoguste brutohind alates 5 tk - 33.54 USD
Netohind koguste puhul alates 10 tk - 24.31 USDKoguste brutohind alates 10 tk - 30.15 USD
Tootja pakendamismeetod:Tuub = 10 tkKast = 60 tk