IXFN60N80P
Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Tootja: IXYS
Tootja tähistus:
IXFN60N80P
TME Sümbol:
IXFN60N80P
Spetsifikatsioon
Manufacturer | IXYS | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | single transistor | ||
Drain-source voltage | 800V | ||
Drain current | 53A | ||
Case | SOT227B | ||
Electrical mounting | screw | ||
Polarisation | unipolar | ||
On-state resistance | 0,14Ω | ||
Pulsed drain current | 150A | ||
Power dissipation | 1,04kW | ||
Technology | HiPerFET™, Polar™ | ||
Kind of channel | enhancement | ||
Gate charge | 250nC | ||
Reverse recovery time | 250ns | ||
Gate-source voltage | ±30V | ||
Mechanical mounting | screw |
Brutomass37.31 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN60N80PTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 39.44 EURKoguste brutohind alates 1 tk - 48.91 EUR
Netohind koguste puhul alates 2 tk - 37.96 EURKoguste brutohind alates 2 tk - 47.06 EUR
Netohind koguste puhul alates 3 tk - 36.57 EURKoguste brutohind alates 3 tk - 45.34 EUR
Netohind koguste puhul alates 5 tk - 35.38 EURKoguste brutohind alates 5 tk - 43.87 EUR
Tootja pakendamismeetodTuub = 10 tk