IXFN60N80P
Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Tootja: IXYS
Tootja tähistus:
IXFN60N80P
TME Sümbol:
IXFN60N80P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 800V | |
Drain current | 53A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0,14Ω | |
Pulsed drain current | 150A | |
Power dissipation | 1,04kW | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 250nC | |
Reverse recovery time | 250ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Brutomass37.31 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN60N80PTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 39.81 EURKoguste brutohind alates 1 tk - 49.36 EUR
Netohind koguste puhul alates 2 tk - 38.30 EURKoguste brutohind alates 2 tk - 47.50 EUR
Netohind koguste puhul alates 3 tk - 36.91 EURKoguste brutohind alates 3 tk - 45.76 EUR
Netohind koguste puhul alates 5 tk - 35.71 EURKoguste brutohind alates 5 tk - 44.27 EUR
Tootja pakendamismeetodTuub = 10 tk