IXFN80N60P3
Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Tootja: IXYS
Tootja tähistus:
IXFN80N60P3
TME Sümbol:
IXFN80N60P3
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 600V | |
Drain current | 66A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 77mΩ | |
Pulsed drain current | 200A | |
Power dissipation | 960W | |
Technology | HiPerFET™, Polar3™ | |
Kind of channel | enhancement | |
Gate charge | 0,19µC | |
Reverse recovery time | 250ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Brutomass37.1 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN80N60P3
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