IXFN82N60P
Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Tootja: IXYS
Tootja tähistus:
IXFN82N60P
TME Sümbol:
IXFN82N60P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 600V | |
Drain current | 72A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 75mΩ | |
Pulsed drain current | 200A | |
Power dissipation | 1,04kW | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 240nC | |
Reverse recovery time | 200ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Brutomass29.69 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN82N60PTükkide arv (Mitmekordsus: 1)
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Netohind koguste puhul alates 1 tk - 42.24 USDKoguste brutohind alates 1 tk - 52.38 USD
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