IXFN82N60Q3
Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 240A
Tootja: IXYS
Tootja tähistus:
IXFN82N60Q3
TME Sümbol:
IXFN82N60Q3
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 600V | |
Drain current | 66A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 75mΩ | |
Pulsed drain current | 240A | |
Power dissipation | 960W | |
Technology | HiPerFET™, Q3-Class | |
Kind of channel | enhancement | |
Gate charge | 275nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Brutomass27.3 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN82N60Q3Tükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 49.49 EURKoguste brutohind alates 1 tk - 61.37 EUR
Netohind koguste puhul alates 3 tk - 46.57 EURKoguste brutohind alates 3 tk - 57.74 EUR
Netohind koguste puhul alates 10 tk - 44.22 EURKoguste brutohind alates 10 tk - 54.83 EUR
Tootja pakendamismeetodTuub = 10 tk