IXGN200N170
Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Tootja: IXYS
Tootja tähistus:
IXGN200N170
TME Sümbol:
IXGN200N170
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | IGBT | |
Semiconductor structure | single transistor | |
Max. off-state voltage | 1,7kV | |
Collector current | 160A | |
Case | SOT227B | |
Electrical mounting | screw | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 1,05kA | |
Power dissipation | 1,25kW | |
Technology | NPT | |
Mechanical mounting | screw |
Brutomass30 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Moodulid IGBT IXYS,
* IXGN200N170Tükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 65.90 USDKoguste brutohind alates 1 tk - 81.72 USD
Netohind koguste puhul alates 5 tk - 60.75 USDKoguste brutohind alates 5 tk - 75.33 USD
Netohind koguste puhul alates 10 tk - 58.62 USDKoguste brutohind alates 10 tk - 72.69 USD