MID200-12A4
Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Tootja: IXYS
Tootja tähistus:
MID200-12A4
TME Sümbol:
MID200-12A4
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | IGBT | |
Semiconductor structure | diode/transistor | |
Topology | boost chopper | |
Max. off-state voltage | 1,2kV | |
Collector current | 180A | |
Case | Y3-DCB | |
Application | motors | |
Electrical mounting | FASTON connectors, screw | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 360A | |
Power dissipation | 1,13kW | |
Technology | NPT | |
Mechanical mounting | screw |
Brutomass10 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Moodulid IGBT IXYS,
* MID200-12A4Tükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 166.00 EURKoguste brutohind alates 1 tk - 205.84 EUR
Netohind koguste puhul alates 4 tk - 148.00 EURKoguste brutohind alates 4 tk - 183.53 EUR
Netohind koguste puhul alates 6 tk - 133.00 EURKoguste brutohind alates 6 tk - 164.92 EUR